TiN and InSnO reference

InSnO

sample commercial 25 mm fused quartz with ITO, defects and inhomogenieties visible in SEM

also piece of In 99.99% foil Goodfellow, exposed to ambient many months

Lots of C and O plus In.

ALD TiN

Deposited by Aaron and Adam, before 6/12/14, substrate??

See some C, Ti, O, N peak convolved with Ti

Clear difference spectra shape from metallic Ti (PHI Auger book)

Sputter 30 sec 15 mPa using PVi-ko3-Frank settings, modified from Changhyun

After sputter no C, Ar visible, 415:419 peak ratio changes, relative increase 419

previous marks, scan squares, point spots, disappear. 

Cond 80, obj 59.5 2 kV no raster offset (-.2, -.7), specimen current 280 nA.

Only minor changes 2 more 30 sec sputter cycles, total 90s.

Now additional 90 sex

InP reference wafer, n type, AXP, N doped,

New unopened InP wafer from Shaul, American Xtal Tech, n-type
Cleave and mount sample, 3 kV 20 nA 30 tilt, "large hole" holder

C and O contamination, but P and In clear. Take survey CRR 5-10-15-20 and CAE 20

Tried REELS, 5 eV pass, apertures less important, 1400 nominal peak 1392.20 SCM on

InP NW experiments

samples

Dry transfer InP NW onto Si, wires grown by Shaul ~ last year (?)

Auger spectra

No obvious charging, pretty good spectra at 3 nA after careful realign. Max current not good, large spillover onto Si substrate. 

Drift is an issue, works better splitting 50-580 eV spectra, 0.5 eV, 50 ms into two ~ 30 sec parts, otherwise drift off smaller 80-100 nm wide wires.

Mostly In, P, little C, little O, no sign of low energy Au peaks, used 3 kV.

Consider Auger maps, CAE 50, P 121.5 back 140; In 402.5 back 420

Scanning at slow speed shows "glitches", ~ 10 in a speed 11 90 sec frame. Float system, sublimator off, SE2 off, turbo off, no help.

No glitches scan speed 9 and below. In 2048 pixel, however, glitches at speed 9. I think at some scan speed Zeiss syncs to line frequency, this may be related to glitches.....

Auger scale 0.3 LP 6