- Use Si 10 um grid 30 degree tilt, sputter off O and C.
- SEM multiplier off and beam blanked.
- Hemisphere CAE 10 eV at 56 eV, entrance slit 3, 2 mm circle
- detect SE from ions
- At 3 kV ions, best focus ~ OBJ 62
- Currents to sample (no bias)
- cond 100, 55 nA
- 95, 85 nA
- 90, 166 nA
- 85, 310 nA
- 80, 700 nA
- around 60, 6.6 uA
- spot center ~ x=1.3, y=0 (at cond 90 obj 70, only weakly dependent)
make Foundry1 profile, 25 mA, grid 150, pressure 20 mPa
cond 85 obj 62 voltage 3000
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